Conveners
Pushing SRF Thin Films Limits: Theoretical Advances, Deposition Modeling & DFT
- Claire Antoine
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Guilherme Theophilo Telles (CERN)21/09/2026, 11:00Pushing SRF Thin Films Limits: Theoretical Advances, Deposition Modeling & DFT
While perfect type-II superconductors are expected to completely expel their internal magnetic flux after transitioning into the Meissner state, impurities and defects may cause some level magnetic flux to be trapped as vortices. Such trapped vortices can be problematic for SRF cavities, causing unwanted localized heating from vortex interaction with the applied RF field, while the trapped...
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Shantong Chen (Institute of Modern Physics,CAS)21/09/2026, 11:20Pushing SRF Thin Films Limits: Theoretical Advances, Deposition Modeling & DFT
The surface chemistry of superconducting radio-frequency (SRF) niobium cavities during medium-temperature baking (MTB, ~250–400 °C) has been widely investigated. However, atomic-scale insight into how water molecules—inevitably introduced by high-pressure rinsing (HPR)—interact with niobium and its surface oxides remains largely absent. Here, using first-principles calculations, we...
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Dr Benzi John (STFC-UKRI)21/09/2026, 11:40Pushing SRF Thin Films Limits: Theoretical Advances, Deposition Modeling & DFT
In this study, we report on preliminary results from plasma-kinetic particle-in-cell (PIC) simulations, investigating the plasma discharge phenomenon in a DC magnetron sputtering device for thin film deposition. As the quality of the sputtered films depend on the plasma chemical composition and interaction with the target material, it is important to understand and characterise the underlying...
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Mr Aaron Gobeyn (TU Darmstadt)21/09/2026, 12:00Pushing SRF Thin Films Limits: Theoretical Advances, Deposition Modeling & DFT
We extend the model of Kubo et al. [1] in two ways: first, by generalizing it to a arbitrary sequences of planar layers of arbitrary type, e.g. superconducting (S), normal conducting and insulating (I); and second,
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by accounting for all contributions, including Ohmic losses and dielectric effects. We examine the maximum applicable field for (SI)$^n$S structures and find that the optimum... -
21/09/2026, 12:20