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Sensors in High Voltage CMOS processes, a variant of CMOS processes typically used for manufacturing consumer electronics such as power devices, are the most promising route for achieving thin monolithic detectors with excellent radiation tolerance as required by near and midterm future physics experiments. The combination of CMOS technology with a high voltage process allows for the integration of the sensing cells (i.e. the pixels) and the readout chip into a single, thin sensing device (i.e. a sensor chip), while operating the device at high substrate biasing voltages, which is key for achieving high radiation tolerance. High Voltage CMOS sensors were first proposed in 2007 and have matured significantly since then. The upcoming Mu3e experiment at the Paul Scherrer Institute in Switzerland, which has selected High Voltage CMOS for its silicon tracking detector, will showcase its use for large tracking systems. However, significant further R&D is necessary to combine the challenging specifications of low-mass (100 μm thickness) and high radiation tolerance (>1016 1 MeV equivalent neutrons per cm2) together with high timing (1 ns) and spatial resolution (100 µm cell size), high data rate (100 MHz/cm2) and low-power consumption (150 mW/cm2) into a single, full-scale sensing device (~ 2 cm x 2 cm). This presentation will try to give an overview of ongoing R&D in High Voltage CMOS sensors especially in the framework of the LHCb Mighty-Tracker upgrade, proposed for installation during 2033-34, and the DRDs to achieve these specifications.