The report provides an overview of investigations of HR GaAs: Cr wafer characteristics dependencies on the properties of raw material (n-GaAs). Wafers with a diameters of 76, 100 mm produced by LEC and VGF technologies were investigated. It has been established that macroscopic inhomogeneities of resistivity and photosensitivity distributions in HR GaAs: Cr wafers are determined, in...
The most common sensor material for detectors at synchrotron sources and free electron lasers is silicon due to its outstanding material quality in terms of homogeneity and charge carrier transport properties. However, the low atomic number of silicon (Z=14) is the reason for a relatively low absorption efficiency at energies above 20 keV. Sensors with high atomic number material, so-called...
Developments and research around X-ray sensors have always received a significant support at ESRF, as the sensor quality governs the performance of the whole detection chain and thus the quality of the data. This talk briefly introduces the ongoing and planned developments particularly on high-Z semiconductor pixel sensors, in relation with the detection challenges set by the EBS and the...
The European Synchrotron Radiation Facility (ESRF) is being subjected to the second phase of its upgrade, the so-called EBS (Extremely Brilliant Source) upgrade. The new storage ring will be able to deliver X-ray beams with brilliance and coherence increased by a factor 100, ushering in a new generation of synchrotrons. In order to exploit this domain ESRF has launched an ambitious...
n classical X-ray imaging, the absorption or penetration of X-ray photons through a material is used for imaging, but the energy of the incoming photons is not recorded. This makes a targeted material recognition impossible, since a higher absorption of the X-ray photons can result both from a higher density of the sample to be examined and from a higher penetration depth of the radiation....
Cadmium telluride (CdTe) offers excellent absorption efficiency in the energy region above 30 keV and therefore for the detection of high energy levels of radiation originating from common radioactive sources. The absorption efficiency can be further improved by increasing the sensor thickness. However, an expansion of the sensor layer thickness simultaneously increases the effect of charge...
